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SCT3160KW7HRTL

Name: ROHM Semiconductor SCT3160KW7HRTL
Brand: ROHM Semiconductor
SKU: 755-SCT3160KW7HRTL
Price: 7.14 EUR
Availability: InStock

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Mouser No:

755-SCT3160KW7HRTL

Mfr. No:

SCT3160KW7HRTL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L

Datasheet:

SCT3160KW7HRTL Datasheet

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In Stock: 962

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,14 €	7,14 €
	6,11 €	61,10 €
	4,58 €	458,00 €
	4,55 €	2.275,00 €
Full Reel (Order in multiples of 1000)
	4,25 €	4.250,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	208 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	42 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	59 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	9 ns
Forward Transconductance - Min:	2.5 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	3 ns
Part # Aliases:	SCT3160KW7HR

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Datasheet

SCT3160KW7HRTL Datasheet

Specification Sheets

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.