Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum Operating Temperature Maximum Operating Temperature Series Qualification Packaging

onsemi SiC Schottky Diodes 650V 10A SIC SBD 1.483In Stock
Min.: 1
Mult.: 1
Reel: 2.500
SMD/SMT DPAK-3 (TO-252-3) Single 10 A 650 V 1.5 V 56 A 200 uA - 55 C + 175 C FFSD1065A Reel, Cut Tape, MouseReel

onsemi SiC Schottky Diodes 650V 10A SIC SBD G EN1.5 862In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DPAK-3 (TO-252-3) Single 10 A 650 V 1.38 V 45 A 40 uA - 55 C + 175 C FFSD1065B-F085 AEC-Q101 Reel, Cut Tape, MouseReel

onsemi SiC Schottky Diodes 1200V 8A SIC SBD 2.896In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DPAK-3 (TO-252-3) Single 8 A 1.2 kV 1.45 V 77 A 200 uA - 55 C + 175 C FFSD08120A Reel, Cut Tape, MouseReel

onsemi SiC Schottky Diodes 650V 6A SIC SBD 553In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DPAK-3 (TO-252-3) Single 6 A 650 V 1.5 V 42 A 200 uA - 55 C + 175 C FFSD0665A Reel, Cut Tape, MouseReel

onsemi SiC Schottky Diodes Silicon Carbide Schottky Diode Non-Stocked Lead-Time 10 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

SMD/SMT DPAK-3 (TO-252-3) Single 10 A 1.2 kV 1.45 V 90 A 200 uA - 55 C + 175 C FFSD10120A Reel