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TGF2965-SM

Name: Qorvo TGF2965-SM
Brand: Qorvo
SKU: 772-TGF2965-SM
Price: 83.46 EUR
Availability: InStock

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Mouser No:

772-TGF2965-SM

Mfr. No:

TGF2965-SM

Mfr.:

Qorvo

Description:

GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V

Datasheet:

TGF2965-SM Datasheet (PDF)

ECAD Model:

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Learn more about Qorvo TGF2965-SM

In Stock: 100

Stock:: 100 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	83,46 €	83,46 €
	56,59 €	1.414,75 €
	44,79 €	4.479,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-16
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Id - Continuous Drain Current:	600 mA
Pd - Power Dissipation:	7.5 W
Brand:	Qorvo
Configuration:	Single
Gain:	18 dB
Maximum Operating Frequency:	3 GHz
Minimum Operating Frequency:	30 MHz
Moisture Sensitive:	Yes
Output Power:	6 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	TGF2965
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	- 2.7 V
Part # Aliases:	TGF2965 1123170
Unit Weight:	57,100 mg

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Datasheet

TGF2965-SM Datasheet (PDF)

PCN

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TARIC:: 8542399000
CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
MXHTS:: 8542399999
ECCN:: EAR99

TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.