Buffers for Wireless Technology

The RF Transistor is a semiconductor device which can be used as an amplifier for high-power radio frequency signals. When an amplifier is used as a buffer, it has unity-gain; thus it only isolates signals between electrical nodes. An RF transistor configured as a buffer can isolate the driver from the load at radio frequencies.

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Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Series Transistor Type Technology Transistor Polarity Operating Frequency DC Collector/Base Gain hFE Min Collector- Emitter Voltage VCEO Max Emitter- Base Voltage VEBO Continuous Collector Current Minimum Operating Temperature Maximum Operating Temperature Configuration Mounting Style Package/Case Qualification Packaging
Infineon Technologies RF Bipolar Transistors NPN Silicon RF TRANSISTOR 2.801In Stock
Min.: 1
Mult.: 1
: 3.000

BFP181 Bipolar Si NPN 8 GHz 12 V 2 V 20 mA - 65 C + 150 C Single SMD/SMT SOT-143-4 Reel, Cut Tape, MouseReel
Infineon Technologies RF Bipolar Transistors NPN Silicon RF TRANSISTOR 1.105In Stock
Min.: 1
Mult.: 1
: 3.000

BFP193 Bipolar Si NPN 8 GHz 12 V 2 V 80 mA - 65 C + 150 C Single SMD/SMT SOT-143-4 AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies RF Bipolar Transistors NPN Silicon RF TRANSISTOR 8.962In Stock
Min.: 1
Mult.: 1
: 3.000

BFR182 Bipolar Si NPN 8 GHz 70 12 V 2 V 35 mA - 65 C + 150 C Single SMD/SMT SOT-23 AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW Non-Stocked Lead-Time 26 Weeks
Min.: 15.000
Mult.: 15.000
: 3.000

BFR193 Bipolar Si NPN 8 GHz 70 12 V 2 V 80 mA - 65 C + 150 C Single SMD/SMT SOT-23 AEC-Q100 Reel