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IPI086N10N3 G

Name: Infineon IPI086N10N3 G
Brand: Infineon Technologies
SKU: 726-IPI086N10N3G
Price: 1.89 EUR
Availability: OutOfStock

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Mouser No:

726-IPI086N10N3G

Mfr. No:

IPI086N10N3 G

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 80A I2PAK-3 OptiMOS 3

Datasheet:

IPI086N10N3 G Datasheet (PDF)

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Availability

Stock:: 0

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On Order:: 2.000

Expected 3/9/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,89 €	1,89 €
	0,92 €	9,20 €
	0,824 €	82,40 €
	0,658 €	329,00 €
	0,613 €	613,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-262-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	8.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Series:	OptiMOS 3
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	18 ns
Part # Aliases:	SP000683070 IPI86N1N3GXK IPI086N10N3GXKSA1
Unit Weight:	2,387 g

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Datasheet

IPI086N10N3 G Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.