IPW65R022CFD7AXKSA1

Infineon Technologies
726-IPW65R022CFD7AXK
IPW65R022CFD7AXKSA1

Mfr.:

Description:
MOSFETs AUTOMOTIVE_COOLMOS

ECAD Model:
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In Stock: 235

Stock:
235 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 235 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,94 € 12,94 €
8,02 € 80,20 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
N-Channel
1 Channel
650 V
96 A
22 mOhms
- 20 V, 20 V
4.5 V
234 nC
- 40 C
+ 150 C
446 W
Enhancement
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Product Type: MOSFETs
Factory Pack Quantity: 240
Subcategory: Transistors
Part # Aliases: IPW65R022CFD7A SP003793206
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.