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ZXMHC10A07N8TC

Name: Diodes Incorporated ZXMHC10A07N8TC
Brand: Diodes Incorporated
SKU: 522-ZXMHC10A07N8TC
Price: 1.57 EUR
Availability: InStock

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See Product Specifications

Mouser No:

522-ZXMHC10A07N8TC

Mfr. No:

ZXMHC10A07N8TC

Mfr.:

Diodes Incorporated

Description:

MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9

Datasheet:

ZXMHC10A07N8TC Datasheet (PDF)

ECAD Model:

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In Stock: 23.014

Stock:: 23.014 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,57 €	1,57 €
	0,903 €	9,03 €
	0,642 €	64,20 €
	0,528 €	264,00 €
	0,456 €	456,00 €
Full Reel (Order in multiples of 2500)
	0,452 €	1.130,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	850 mA, 1 A
Rds On - Drain-Source Resistance:	700 mOhms, 1.45 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	2.9 nC, 3.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	870 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Quad
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	2.1 ns, 3.3 ns
Forward Transconductance - Min:	1.6 S, 1.2 S
Product Type:	MOSFETs
Rise Time:	1.5 ns, 2.1 ns
Series:	ZXMHC10
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel, 2 P-Channel
Typical Turn-Off Delay Time:	4.1 ns, 5.9 ns
Typical Turn-On Delay Time:	1.8 ns, 1.6 ns
Unit Weight:	750 mg

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Datasheet

ZXMHC10A07N8TC Datasheet (PDF)

Environmental Compliance (PDF)

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

ZXMH MOSFET H-Bridges

Diodes Incorporated ZXMH MOSFET H-Bridges feature low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridges provide 2 x N + 2 x P channels in a SOIC package and low voltage (V_gs = 4.5V) gate drive. Diodes Inc ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.