VS-4C30ET12S2L-M3

Vishay Semiconductors
78-VS-4C30ET12S2L-M3
VS-4C30ET12S2L-M3

Mfr.:

Description:
SiC Schottky Diodes SiCG4D2PAK2L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Vishay Semiconductors VS-4C30ET12S2L-M3

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
800
Expected 8/14/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,52 € 8,52 €
6,67 € 66,70 €
5,56 € 556,00 €
4,95 € 2.475,00 €
4,40 € 3.520,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
TO-263AB-2
Single
30 A
1.2 kV
1.36 V
144 A
550 uA
- 55 C
+ 175 C
VS-4C30ET12S2L-M3
Brand: Vishay Semiconductors
Pd - Power Dissipation: 250 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 800
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

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