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UF3C120080K3S

Name: onsemi UF3C120080K3S
Brand: onsemi
SKU: 431-UF3C120080K3S
Price: 14.46 EUR
Availability: InStock

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Mouser No:

431-UF3C120080K3S

Mfr. No:

UF3C120080K3S

Mfr.:

onsemi

Description:

SiC MOSFETs 1200V/80MOSICFETG3TO24

Datasheet:

UF3C120080K3S Datasheet

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In Stock: 1.117

Stock:: 1.117 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1117 will be subject to minimum order requirements.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,46 €	14,46 €
	10,95 €	109,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	254.2 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	UF3C
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC

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Datasheet

UF3C120080K3S Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.