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TPN6R303NC,LQ

Name: Toshiba TPN6R303NC,LQ
Brand: Toshiba
SKU: 757-TPN6R303NCLQ
Price: 1.36 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-TPN6R303NCLQ

Mfr. No:

TPN6R303NC,LQ

Mfr.:

Toshiba

Description:

MOSFETs N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W

Datasheet:

TPN6R303NC,LQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TPN6R303NC,LQ

Availability

Stock:: Non-Stocked

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Factory Lead Time:: Request Delivery Quote

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,36 €	1,36 €
	0,855 €	8,55 €
	0,57 €	57,00 €
	0,45 €	225,00 €
	0,409 €	409,00 €
Full Reel (Order in multiples of 3000)
	0,372 €	1.116,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-Advance-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	43 A
Rds On - Drain-Source Resistance:	5.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	14 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	TPN6R303NC
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	14 ns
Unit Weight:	20 mg

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Datasheet

TPN6R303NC,LQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Low On-Resistance Power MOSFETs

Toshiba's Low On-Resistance Power MOSFETs use Toshiba's 8th generation process for lithium-ion battery protection circuits and mobile phone power management switches. This product can contribute to size and thickness reduction, and high efficiency of devices. Features include low on-resistance, high avalanche resistance and are available in a compact package.
Learn More

U-MOSVIII MOSFETs

Toshiba U-MOSVIII MOSFETs combine low on-resistance and a low leakage current in a thin 3.3mm x 3.3mm x 0.9mm TSON Advance package. U-MOSVIII current ratings range from 43A to 100A, R_DS(ON) (typical) from 3.5mΩ to 5.2mΩ, with an input capacitance from 1370pF to 2230pF (typical).