It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK650A60F,S4X

Name: Toshiba TK650A60F,S4X
Brand: Toshiba
SKU: 757-TK650A60FS4X
Price: 1.84 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK650A60FS4X

Mfr. No:

TK650A60F,S4X

Mfr.:

Toshiba

Description:

MOSFETs N-Ch TT-MOSIX 600V 45W 1320pF 11A

Datasheet:

TK650A60F,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK650A60F,S4X

In Stock: 277

Stock:: 277 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,84 €	1,84 €
	0,894 €	8,94 €
	0,886 €	88,60 €
	0,639 €	319,50 €
	0,593 €	593,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220SIS-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	650 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	34 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	MOSIX
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	22 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	TK650A60F
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	55 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK650A60F,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.