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TK380P60Y,RQ

Name: Toshiba TK380P60Y,RQ
Brand: Toshiba
SKU: 757-TK380P60YRQ
Price: 2.23 EUR
Availability: InStock

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Mouser No:

757-TK380P60YRQ

Mfr. No:

TK380P60Y,RQ

Mfr.:

Toshiba

Description:

MOSFETs N-Ch DTMOSV 600V 80W 590pF 9.7A

Datasheet:

TK380P60Y,RQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK380P60Y,RQ

In Stock: 3.850

Stock:: 3.850 Can Dispatch Immediately

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,23 €	2,23 €
	1,44 €	14,40 €
	0,998 €	99,80 €
	0,798 €	399,00 €
	0,745 €	745,00 €
Full Reel (Order in multiples of 2000)
	0,745 €	1.490,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	9.7 A
Rds On - Drain-Source Resistance:	380 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	80 W
Channel Mode:	Enhancement
Tradename:	DTMOSV
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8.2 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	TK380P60Y
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	360 mg

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Datasheet

TK380P60Y,RQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Data

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance R_DS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of R_DS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.