TK380A65Y,S4X

Toshiba
757-TK380A65YS4X
TK380A65Y,S4X

Mfr.:

Description:
MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS

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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,50 € 2,50 €
1,25 € 12,50 €
1,12 € 112,00 €
0,903 € 451,50 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
9.7 A
380 mOhms
- 30 V, 30 V
4 V
20 nC
- 55 C
+ 150 C
30 W
Enhancement
DTMOSV
Tube
Brand: Toshiba
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 8.2 ns
Product Type: MOSFETs
Rise Time: 23 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 150 ns
Typical Turn-On Delay Time: 60 ns
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.