It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK380A65Y,S4X

Name: Toshiba TK380A65Y,S4X
Brand: Toshiba
SKU: 757-TK380A65YS4X
Price: 2.71 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK380A65YS4X

Mfr. No:

TK380A65Y,S4X

Mfr.:

Toshiba

Description:

MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS

Datasheet:

TK380A65Y,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK380A65Y,S4X

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	9.7 A
Rds On - Drain-Source Resistance:	380 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	DTMOSV
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	8.2 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK380A65Y,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance R_DS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of R_DS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.