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TK290P65Y,RQ

Name: Toshiba TK290P65Y,RQ
Brand: Toshiba
SKU: 757-TK290P65YRQ
Price: 2.23 EUR
Availability: InStock

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Mouser No:

757-TK290P65YRQ

Mfr. No:

TK290P65Y,RQ

Mfr.:

Toshiba

Description:

MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A

Datasheet:

TK290P65Y,RQ Datasheet (PDF)

ECAD Model:

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In Stock: 3.803

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,23 €	2,23 €
	1,61 €	16,10 €
	1,21 €	121,00 €
	1,04 €	520,00 €
	0,972 €	972,00 €
Full Reel (Order in multiples of 2000)
	0,972 €	1.944,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11.5 A
Rds On - Drain-Source Resistance:	290 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Tradename:	DTMOSV
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8.5 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	TK290P65Y
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	65 ns
Unit Weight:	360 mg

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Datasheet

TK290P65Y,RQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Data

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance R_DS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of R_DS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.