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TK290A65Y,S4X

Name: Toshiba TK290A65Y,S4X
Brand: Toshiba
SKU: 757-TK290A65YS4X
Price: 2.64 EUR
Availability: InStock

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Mouser No:

757-TK290A65YS4X

Mfr. No:

TK290A65Y,S4X

Mfr.:

Toshiba

Description:

MOSFETs N-Ch DTMOSV 650V 35W 730pF 11.5A

Datasheet:

TK290A65Y,S4X Datasheet (PDF)

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In Stock: 120

Stock:: 120 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,64 €	2,64 €
	1,32 €	13,20 €
	0,972 €	486,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11.5 A
Rds On - Drain-Source Resistance:	290 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	35 W
Channel Mode:	Enhancement
Tradename:	DTMOSV
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8.5 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	TK290A65Y
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	65 ns
Unit Weight:	2 g

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Datasheet

TK290A65Y,S4X Datasheet (PDF)

Application Notes

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance R_DS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of R_DS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.