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TK1K2A60F,S4X

Name: Toshiba TK1K2A60F,S4X
Brand: Toshiba
SKU: 757-TK1K2A60FS4X
Price: 1.69 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK1K2A60FS4X

Mfr. No:

TK1K2A60F,S4X

Mfr.:

Toshiba

Description:

MOSFETs N-Ch TT-MOSIX 600V 35W 740pF 6A

Datasheet:

TK1K2A60F,S4X Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK1K2A60F,S4X

In Stock: 228

Stock:: 228 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,69 €	1,69 €
	0,807 €	8,07 €
	0,721 €	72,10 €
	0,519 €	259,50 €
	0,475 €	475,00 €
	0,461 €	1.152,50 €
	0,458 €	2.290,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220SIS-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	1.2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	21 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	35 W
Channel Mode:	Enhancement
Tradename:	MOSIX
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	TK1K2A60F
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	35 ns
Unit Weight:	2 g

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Datasheet

TK1K2A60F,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.