TK1K0A60F,S4X

Toshiba
757-TK1K0A60FS4X
TK1K0A60F,S4X

Mfr.:

Description:
MOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS

ECAD Model:
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Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
7.5 A
1 Ohms
30 V
4 V
24 nC
- 55 C
+ 150 C
40 W
Enhancement
MOSIX
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 20 ns
Product Type: MOSFETs
Rise Time: 20 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 75 ns
Typical Turn-On Delay Time: 40 ns
Unit Weight: 2 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
190
Expected 12/25/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,73 € 1,73 €
0,83 € 8,30 €
0,738 € 73,80 €
0,587 € 293,50 €
0,55 € 550,00 €
0,527 € 1.317,50 €
0,517 € 2.585,00 €
0,488 € 4.880,00 €