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TK190A65Z,S4X

Name: Toshiba TK190A65Z,S4X
Brand: Toshiba
SKU: 757-TK190A65ZS4X
Price: 3.61 EUR
Availability: InStock

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Mouser No:

757-TK190A65ZS4X

Mfr. No:

TK190A65Z,S4X

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 190mOhms DTMOS-VI

Datasheet:

TK190A65Z,S4X Datasheet (PDF)

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In Stock: 96

Stock:: 96 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,61 €	3,61 €
	1,86 €	18,60 €
	1,63 €	163,00 €
	1,38 €	690,00 €
	1,35 €	1.350,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	19 ns
Series:	DTMOS VI
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	38 ns
Unit Weight:	2 g

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Datasheet

TK190A65Z,S4X Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.