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TJ40S04M3L,LXHQ

Name: Toshiba TJ40S04M3L,LXHQ
Brand: Toshiba
SKU: 757-TJ40S04M3L,LXHQ
Price: 1.38 EUR
Availability: InStock

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Mouser No:

757-TJ40S04M3L,LXHQ

Mfr. No:

TJ40S04M3L,LXHQ

Mfr.:

Toshiba

Description:

MOSFETs 68W 1MHz Automotive; AEC-Q101

Datasheet:

TJ40S04M3L,LXHQ Datasheet (PDF)

ECAD Model:

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In Stock: 46.494

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,38 €	1,38 €
	0,877 €	8,77 €
	0,585 €	58,50 €
	0,462 €	231,00 €
	0,42 €	420,00 €
Full Reel (Order in multiples of 2000)
	0,381 €	762,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	9.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	83 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	150 ns
Product Type:	MOSFETs
Rise Time:	46 ns
Series:	UMOS VI
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	465 ns
Typical Turn-On Delay Time:	63 ns
Part # Aliases:	TJ40S04M3L,LXHQ(O
Unit Weight:	360 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

TJ40S04M3L,LXHQ Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Automotive U-MOSVI Power MOSFETs

Toshiba Automotive U-MOSVI Power MOSFETs are -40V P-channel power MOSFETs for automotive applications. These devices feature a gate drive voltage of -4.5V compared with -6V for the conventional products in the DPAK+ package. This feature allows systems to be used even when the battery voltage drops. The Toshiba Automotive U-MOSVI Power MOSFETs feature low on-resistance.

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.