TGF2023-2-01

Qorvo
772-TGF2023-2-01
TGF2023-2-01

Mfr.:

Description:
GaN FETs DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about Qorvo TGF2023-2-01

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 50   Multiples: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
46,58 € 2.329,00 €
43,68 € 4.368,00 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Die
N-Channel
Brand: Qorvo
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 18 dB
Maximum Operating Frequency: 18 GHz
Minimum Operating Frequency: 0 Hz
Output Power: 6 W
Packaging: Gel Pack
Product: RF JFET Transistors
Product Type: GaN FETs
Series: TGF2023
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN-on-SiC
Transistor Type: GaN HEMT
Type: GaN SiC HEMT
Part # Aliases: 1099624
Unit Weight: 739,600 mg
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5-0810-13

Datasheet

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TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541299000
MXHTS:
85412101
ECCN:
EAR99

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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