T2G6000528-Q3 28V

Qorvo
772-T2G6000528-Q328V
T2G6000528-Q3 28V

Mfr.:

Description:
GaN FETs DC-6.0GHz 10 Watt 28V GaN

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 100   Multiples: 100
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
73,69 € 7.369,00 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Brand: Qorvo
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 7 W
Packaging: Tray
Product Type: GaN FETs
Series: T2G6000528
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Part # Aliases: 1099997
Unit Weight: 4,382 g
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8532331000
MXHTS:
8541299900
ECCN:
EAR99

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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