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T2G6000528-Q3

Name: Qorvo T2G6000528-Q3
Brand: Qorvo
SKU: 772-T2G6000528-Q3
Price: 113.41 EUR
Availability: InStock

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Mouser No:

772-T2G6000528-Q3

Mfr. No:

T2G6000528-Q3

Mfr.:

Qorvo

Description:

GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz

Datasheet:

T2G6000528-Q3 Datasheet (PDF)

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In Stock: 375

Stock:: 375 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	113,41 €	113,41 €
	81,38 €	2.034,50 €
	73,69 €	7.369,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-200
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	650 mA
Pd - Power Dissipation:	12.5 W
Brand:	Qorvo
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
Gain:	15 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	10 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	T2G6000528
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	T2G6000528 1099997
Unit Weight:	7,396 g

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Datasheet

T2G6000528-Q3 Datasheet (PDF)

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8541290065
MXHTS:: 8542399901
ECCN:: EAR99

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.