STGP30H60DFB

STMicroelectronics
511-STGP30H60DFB
STGP30H60DFB

Mfr.:

Description:
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT

ECAD Model:
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In Stock: 3.169

Stock:
3.169 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,47 € 2,47 €
1,22 € 12,20 €
1,10 € 110,00 €
0,894 € 447,00 €
0,819 € 819,00 €
0,778 € 1.556,00 €
0,77 € 3.850,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
STGP30H60DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.