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SSM6N357R,LF

Name: Toshiba SSM6N357R,LF
Brand: Toshiba
SKU: 757-SSM6N357RLF
Price: 0.56 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6N357RLF

Mfr. No:

SSM6N357R,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=.65A VDSS=60V

Datasheet:

SSM6N357R,LF Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba SSM6N357R,LF

In Stock: 1.106

Stock:: 1.106

Can Dispatch Immediately

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On Order:: 6.000

Expected 6/25/2026

6.000

Expected 6/26/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,568 €	0,57 €
	0,35 €	3,50 €
	0,224 €	22,40 €
	0,171 €	85,50 €
	0,153 €	153,00 €
Full Reel (Order in multiples of 3000)
	0,125 €	375,00 €
	0,115 €	690,00 €
	0,111 €	999,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSOP-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	650 mA
Rds On - Drain-Source Resistance:	1.8 Ohms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	1.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MOSV
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Forward Transconductance - Min:	500 mS
Product Type:	MOSFETs
Series:	SSM6N357R
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	3000 ns
Typical Turn-On Delay Time:	990 ns
Unit Weight:	20 mg

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM6N357R,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive Solutions

Toshiba Automotive Solutions offer various automotive semiconductor devices designed to improve driving safety. This includes advanced driver assistance systems (ADAS) using an image recognition processor. Toshiba provides leading-edge semiconductor technologies from a future perspective to deliver comprehensive driver assistance solutions. These solutions, including self-driving, emulate human eyes and other intricate human senses.

MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (V_DS) range from 50V to 60V and a gate-source voltage (V_GS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.

SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs

Toshiba SSM6N357R and SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel components designed for relay driver applications. The SSM6N357R,LF comes with two channels, whereas the SSM3K357R,LF comes with a single channel. These AEC-Q101-qualified MOSFETs feature a 3V gate drive voltage, built-in internal Zener diodes/resistors, and a 2kV class Human Body Model (HBM) ESD rating. The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, +150°C maximum channel temperature, and 12.6mJ single-pulse avalanche energy.

SSM6x N- & P-Channel MOSFETs

Toshiba SSM6x N- and P-Channel MOSFETs with high-speed switching operate as both power management and analog switches. These MOSFETs provide very low on-resistance (as low as 1.1mΩ to a 115mΩ maximum) for different gate-to-source voltage ranges. The SSM6x MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance, operate as DC-to-DC converters, and drive a 1.2V to 4.5V gate voltage. The Toshiba SSM6x MOSFETs deliver less drain power dissipation (up to 150mW), producing less heat while operating within a 12V to 100V input voltage range.