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SSM6N17FU(TE85L,F)

Name: Toshiba SSM6N17FU(TE85L,F)
Brand: Toshiba
SKU: 757-SSM6N17FUTE85LF
Price: 0.36 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6N17FUTE85LF

Mfr. No:

SSM6N17FU(TE85L,F)

Mfr.:

Toshiba

Description:

MOSFETs 2-in-1 MOSFET ID=100mA VDSS=50V

Datasheet:

SSM6N17FU(TE85L,F) Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6N17FU(TE85L,F)

In Stock: 3.950

Stock:: 3.950 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,361 €	0,36 €
	0,22 €	2,20 €
	0,139 €	13,90 €
	0,104 €	52,00 €
	0,091 €	91,00 €
Full Reel (Order in multiples of 3000)
	0,075 €	225,00 €
	0,066 €	396,00 €
	0,058 €	522,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	100 mA
Rds On - Drain-Source Resistance:	20 Ohms
Vgs - Gate-Source Voltage:	- 7 V, 7 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MOSV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Forward Transconductance - Min:	20 mS
Product Type:	MOSFETs
Series:	SSM6N17FU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM6N17FU(TE85L,F) Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (V_DS) range from 50V to 60V and a gate-source voltage (V_GS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.