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SSM6K517NU,LF

Name: Toshiba SSM6K517NU,LF
Brand: Toshiba
SKU: 757-SSM6K517NULF
Price: 0.52 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6K517NULF

Mfr. No:

SSM6K517NU,LF

Mfr.:

Toshiba

Description:

MOSFETs UDFN6B N-CH 30V 6A

Datasheet:

SSM6K517NU,LF Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba SSM6K517NU,LF

In Stock: 3.702

Stock:: 3.702 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,525 €	0,53 €
	0,335 €	3,35 €
	0,224 €	22,40 €
	0,15 €	75,00 €
Full Reel (Order in multiples of 3000)
	0,119 €	357,00 €
	0,102 €	612,00 €
	0,10 €	900,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6B
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	39.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	3.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	8,500 mg

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Datasheet

SSM6K517NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

SSM6K51xNU Silicon N-Channel MOSFETs

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs are part of Toshiba's extensive portfolio of MOSFETs in various circuit configurations and packages. The devices feature high speed, high performance, low loss, low on-resistance, small packaging, and more. The Toshiba SSM6K51xNU MOSFETs are ideal for power management switches and feature high-speed switching. These devices have a 1.5V drive with low drain-source on-resistance.