SSM3K357R,LF

Toshiba
757-SSM3K357RLF
SSM3K357R,LF

Mfr.:

Description:
MOSFETs LowON Res MOSFET ID=.65A VDSS=60V

Datasheet:
ECAD Model:
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In Stock: 5.546

Stock:
5.546
Can Dispatch Immediately
On Order:
6.000
Expected 8/7/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,447 € 0,45 €
0,276 € 2,76 €
0,177 € 17,70 €
0,132 € 66,00 €
0,119 € 119,00 €
Full Reel (Order in multiples of 3000)
0,097 € 291,00 €
0,089 € 534,00 €
0,08 € 720,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23F-3
N-Channel
1 Channel
60 V
650 mA
1.8 Ohms
- 12 V, 12 V
1.3 V
1.5 nC
- 55 C
+ 150 C
1.5 W
Enhancement
AEC-Q101
MOSV
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Forward Transconductance - Min: 500 mS
Product Type: MOSFETs
Series: SSM3K357R
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 3000 ns
Typical Turn-On Delay Time: 990 ns
Unit Weight: 11 mg
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Attributes selected: 0 

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
85412999
ECCN:
EAR99

SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs

Toshiba SSM6N357R and SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel components designed for relay driver applications. The SSM6N357R,LF comes with two channels, whereas the SSM3K357R,LF comes with a single channel. These AEC-Q101-qualified MOSFETs feature a 3V gate drive voltage, built-in internal Zener diodes/resistors, and a 2kV class Human Body Model (HBM) ESD rating. The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, +150°C maximum channel temperature, and 12.6mJ single-pulse avalanche energy.

SSM3 High Current MOSFETs

Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches. 

MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (VDS) range from 50V to 60V and a gate-source voltage (VGS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.

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