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SSM3K2615TU,LF

Name: Toshiba SSM3K2615TU,LF
Brand: Toshiba
SKU: 757-SSM3K2615TULF
Price: 0.55 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-SSM3K2615TULF

Mfr. No:

SSM3K2615TU,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=2A VDSS=60V

Datasheet:

SSM3K2615TU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3K2615TU,LF

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 2.740

Expected 3/9/2026

3.000

Expected 3/27/2026
Factory Lead Time:: 9

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,55 €	0,55 €
	0,337 €	3,37 €
	0,217 €	21,70 €
	0,164 €	82,00 €
	0,145 €	145,00 €
Full Reel (Order in multiples of 3000)
	0,121 €	363,00 €
	0,11 €	660,00 €
	0,105 €	945,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UFM-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	300 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	6 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.6 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MOSV
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	50 ns
Forward Transconductance - Min:	1 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	SSM3K2615TU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	30 ns
Unit Weight:	6,600 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM3K2615TU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (V_DS) range from 50V to 60V and a gate-source voltage (V_GS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.