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SQUN702E-T1_GE3

Name: Vishay SQUN702E-T1_GE3
Brand: Vishay Semiconductors
SKU: 78-SQUN702E-T1_GE3
Price: 1.73 EUR
Availability: OutOfStock

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Mouser No:

78-SQUN702E-T1_GE3

Mfr. No:

SQUN702E-T1_GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 40-V N- & P-CH COMMON DRAIN + 200-V

Datasheet:

SQUN702E-T1_GE3 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Triple die
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	3 Channel
Vds - Drain-Source Breakdown Voltage:	40 V, 200 V
Id - Continuous Drain Current:	20 A, 30 A
Rds On - Drain-Source Resistance:	9.2 mOhms, 30 mOhms, 60 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V, 2.5 V
Qg - Gate Charge:	14 nC, 23 nC, 30.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	48 W, 60 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Brand:	Vishay Semiconductors
Configuration:	Triple
Fall Time:	2 ns, 10 ns, 19 ns
Forward Transconductance - Min:	16 S, 19 S, 65 S
Product Type:	MOSFETs
Rise Time:	3 ns, 9 ns, 12 ns
Series:	SQUN
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	2 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	15 ns, 22 ns, 43 ns
Typical Turn-On Delay Time:	7 ns, 8 ns, 10 ns

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Datasheet

SQUN702E-T1_GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N- & P-Channel Pair Thermally Enhanced MOSFETs

Vishay N- and P-Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one package. These Vishay N- and P-Channel MOSFETs are designed to minimize the ON-state Resistance (R_DS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.