It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SISS72DN-T1-GE3

Name: Vishay SISS72DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISS72DN-T1-GE3
Price: 2.12 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SISS72DN-T1-GE3

Mfr. No:

SISS72DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S

Datasheet:

SISS72DN-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SISS72DN-T1-GE3

In Stock: 5.614

Stock:: 5.614 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,12 €	2,12 €
	1,37 €	13,70 €
	0,937 €	93,70 €
	0,744 €	372,00 €
	0,684 €	684,00 €
Full Reel (Order in multiples of 3000)
	0,639 €	1.917,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	25.5 A
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, ThunderFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	1 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SISS72DN-T1-GE3 Datasheet

Models

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SISS7xDN TrenchFET MOSFETs

Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET^®with ThunderFET technology that optimizes the balance of R_DS, Q_G,Q_SW,and Q_OSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.