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SISS70DN-T1-GE3

Name: Vishay SISS70DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISS70DN-T1-GE3
Price: 1.63 EUR
Availability: InStock

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Mouser No:

78-SISS70DN-T1-GE3

Mfr. No:

SISS70DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 125V Vds 20V Vgs PowerPAK 1212-8S

Datasheet:

SISS70DN-T1-GE3 Datasheet

ECAD Model:

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In Stock: 5.990

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,63 €	1,63 €
	1,04 €	10,40 €
	0,702 €	70,20 €
	0,556 €	278,00 €
	0,515 €	515,00 €
Full Reel (Order in multiples of 3000)
	0,442 €	1.326,00 €
	0,438 €	3.942,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	125 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	29.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	15.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, ThunderFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	1 g

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Datasheet

SISS70DN-T1-GE3 Datasheet

Models

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SISS7xDN TrenchFET MOSFETs

Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET^®with ThunderFET technology that optimizes the balance of R_DS, Q_G,Q_SW,and Q_OSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.