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SCZ4011KTAC23

Name: ROHM Semiconductor SCZ4011KTAC23
Brand: ROHM Semiconductor
SKU: 755-SCZ4011KTAC23
Price: 67.82 EUR
Availability: InStock

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Mouser No:

755-SCZ4011KTAC23

Mfr. No:

SCZ4011KTAC23

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules 1200V, 106A, Half-bridge, SiC Power Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCZ4011KTAC23 Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor SCZ4011KTAC23

In Stock: 225

Stock:: 225 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	67,82 €	67,82 €
	56,04 €	560,40 €
	50,46 €	5.046,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
Technology:	SiC
Package/Case:	DOT-247-7
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	106 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	361 W
Packaging:	Tube
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	16 ns
Product:	Power Module
Product Type:	MOSFET Modules
Rise Time:	19 ns
Factory Pack Quantity:	225
Subcategory:	Discrete and Power Modules
Tradename:	EcoSiC
Typical Turn-Off Delay Time:	133 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

SCZ4011KTAC23 Datasheet

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USHTS:: 8541290095
ECCN:: EAR99

High-Density SiC Power Modules

ROHM Semiconductor High-Density Silicon Carbide (SiC) Power Modules are designed to support high-efficiency power conversion in automotive and industrial applications. The lineup includes several package platforms such as TRCDRIVE pack™, HSDIP20, and DOT-247, each optimized for different power classes and system requirements. These packages integrate SiC MOSFETs into compact module structures that enable high power density, stable switching performance, and efficient thermal management. Depending on the package, configurations such as 2-in-1, 4-in-1, and 6-in-1 are available, providing flexibility for a wide range of power conversion and motor drive applications.