SCT4045DW7TL

ROHM Semiconductor
755-SCT4045DW7TL
SCT4045DW7TL

Mfr.:

Description:
SiC MOSFETs TO263 750V 31A N-CH SIC

ECAD Model:
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In Stock: 1.946

Stock:
1.946 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1946 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
10,07 € 10,07 €
7,88 € 78,80 €
6,25 € 625,00 €
6,06 € 3.030,00 €
Full Reel (Order in multiples of 1000)
5,18 € 5.180,00 €
5,12 € 10.240,00 €
10.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
750 V
31 A
59 mOhms
- 4 V, + 21 V
4.8 V
63 nC
+ 175 C
93 W
Enhancement
Brand: ROHM Semiconductor
Compliance: Done
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 9.3 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 16 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 5.1 ns
Part # Aliases: SCT4045DW7
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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

SCT4045DW7 N-Ch SiC Power MOSFET

ROHM Semiconductor SCT4045DW7 N-Ch SiC power MOSFET offers low on-resistance of 45mΩ and a fast switching speed. The 750V SCT4045DW7 is simple to drive and easy to parallel. The device is suitable for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.