SCT4026DW7TL

ROHM Semiconductor
755-SCT4026DW7TL
SCT4026DW7TL

Mfr.:

Description:
SiC MOSFETs TO263 750V 51A N-CH SIC

ECAD Model:
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In Stock: 2.008

Stock:
2.008 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2008 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
14,59 € 14,59 €
11,68 € 116,80 €
9,57 € 957,00 €
Full Reel (Order in multiples of 1000)
8,97 € 8.970,00 €
2.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
750 V
51 A
26 mOhms
- 4 V, + 21 V
4.8 V
94 nC
+ 175 C
150 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 13 ns
Forward Transconductance - Min: 16 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 22 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 9.5 ns
Part # Aliases: SCT4026DW7
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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

SCT4026DW7 N-Ch SiC power MOSFET

ROHM Semiconductor SCT4026DW7 N-Ch SiC power MOSFET is a 750V, 26mΩ MOSFET in a TO-263-7L package. The SCT4026DW7 is simple to drive and easy to parallel with fast reverse recovery. The SCT4026DW7 is ideal for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.