SCT012W90G3-4AG

STMicroelectronics
511-SCT012W90G3-4AG
SCT012W90G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP247-3
1 Channel
900 V
110 A
15.8 mOhms
- 10 V, + 22 V
3.1 V
138 nC
- 55 C
+ 200 C
625 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Fall Time: 16 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 43 ns
Factory Pack Quantity: 1
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 20 ns
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Italy
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics  Automotive-Grade Silicon Carbide Power MOSFETs are  developed using ST's  advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices  feature low on-resistance per unit area and very good switching  performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

In Stock: 558

Stock:
558 Can Dispatch Immediately
Factory Lead Time:
36 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
20,91 € 20,91 €
16,74 € 167,40 €
14,47 € 1.447,00 €
13,71 € 6.855,00 €
1.000 Quote

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