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SCS215KGC17

Name: ROHM Semiconductor SCS215KGC17
Brand: ROHM Semiconductor
SKU: 755-SCS215KGC17
Price: 8.71 EUR
Availability: InStock

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Mouser No:

755-SCS215KGC17

Mfr. No:

SCS215KGC17

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY

Datasheet:

SCS215KGC17 Datasheet (PDF)

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Learn more about ROHM Semiconductor SCS215KGC17

In Stock: 2.719

Stock:: 2.719 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,71 €	8,71 €
	5,58 €	55,80 €
	5,29 €	529,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220ACG-2
Configuration:	Single
If - Forward Current:	15 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.6 V
Ifsm - Forward Surge Current:	62 A
Ir - Reverse Current:	300 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	180 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV
Part # Aliases:	SCS215KG

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Datasheet

SCS215KGC17 Datasheet (PDF)

Specification Sheets

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TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.