SCS212AGC17

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Mouser No:

755-SCS212AGC17

Mfr. No:

SCS212AGC17

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes RECT 650V 12A SM SIC SKY

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

SCS212AGC17 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220ACG-2
Configuration:	Single
If - Forward Current:	12 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	43 A
Ir - Reverse Current:	240 uA
Maximum Operating Temperature:	+ 175 C
Vr - Reverse Voltage:	650 V
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	93 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Part # Aliases:	SCS212AG

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Datasheet

SCS212AGC17 Datasheet (PDF)

Specification Sheets

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Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.