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PJQ44605AP-AU_R2_002A1

Name: Panjit PJQ44605AP-AU_R2_002A1
Brand: Panjit
SKU: 241-PJQ44605APAUR200
Price: 1.03 EUR
Availability: InStock

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See Product Specifications

Mouser No:

241-PJQ44605APAUR200

Mfr. No:

PJQ44605AP-AU_R2_002A1

Mfr.:

Panjit

Description:

MOSFETs 60V P-Channel Enhancement Mode MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJQ44605AP-AU_R2_002A1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Panjit PJQ44605AP-AU_R2_002A1

In Stock: 4.083

Stock:: 4.083 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,03 €	1,03 €
	0,648 €	6,48 €
	0,427 €	42,70 €
	0,338 €	169,00 €
	0,30 €	300,00 €
	0,281 €	702,50 €
Full Reel (Order in multiples of 5000)
	0,238 €	1.190,00 €
	0,231 €	2.310,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN3333-8L
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Panjit
Configuration:	Single
Fall Time:	21 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	41 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	30 mg

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Datasheet

PJQ44605AP-AU_R2_002A1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.

60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed with advanced trench technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage while maintaining superior switching performance. The devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. The MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers. With AEC-Q101 qualification options and a high junction temperature of 175°C, the MOSFETs are ideal for automotive design engineers to simplify circuitry while optimizing performances.