PJP75N06SA-AU_T0_006A1

Name: Panjit PJP75N06SA-AU_T0_006A1
Brand: Panjit
SKU: 241-PJP75N06SAAU06A1
Price: 1.38 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

241-PJP75N06SAAU06A1

Mfr. No:

PJP75N06SA-AU_T0_006A1

Mfr.:

Panjit

Description:

MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 64 A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJP75N06SA-AU_T0_006A1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Panjit PJP75N06SA-AU_T0_006A1

In Stock: 1.459

Stock:: 1.459 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,38 €	1,38 €
	0,877 €	8,77 €
	0,584 €	58,40 €
	0,479 €	239,50 €
	0,419 €	419,00 €
	0,385 €	962,50 €
	0,349 €	1.745,00 €
	0,347 €	3.470,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	64 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	27 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Panjit
Configuration:	Single
Fall Time:	50 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	7.8 ns
Unit Weight:	2,095 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

PJP75N06SA-AU_T0_006A1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.

PJP75N06SA-AU_T0_006A1

Mfr.: Panjit

Description: MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 64 A

In Stock: 1.459

Pricing (EUR)

Specifications

Documents (1)

Datasheet

Product Compliance

More Information

60V N-Channel Enhancement Mode MOSFETs

Customers Also Purchased

FEATURED PRODUCTS PANJIT

QuickView

An unexpected error has occurred.

Mfr.:

Panjit

Description:

MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 64 A

FEATURED PRODUCTS

PANJIT