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NVMYS5D3N04CTWG

Name: onsemi NVMYS5D3N04CTWG
Brand: onsemi
SKU: 863-NVMYS5D3N04CTWG
Price: 1.39 EUR
Availability: InStock

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Mouser No:

863-NVMYS5D3N04CTWG

Mfr. No:

NVMYS5D3N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 5.3Ohm 68A Single N-Channel

Datasheet:

NVMYS5D3N04CTWG Datasheet

ECAD Model:

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In Stock: 2.970

Stock:: 2.970 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2970 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,39 €	1,39 €
	0,886 €	8,86 €
	0,589 €	58,90 €
	0,464 €	232,00 €
	0,408 €	408,00 €
Full Reel (Order in multiples of 3000)
	0,385 €	1.155,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	71 A
Rds On - Drain-Source Resistance:	5.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	53 S
Product Type:	MOSFETs
Rise Time:	72 ns
Series:	NVMYS5D3N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	75 mg

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Datasheet

NVMYS5D3N04CTWG Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.