MR25H128ACDFR

Everspin Technologies
936-MR25H128ACDFR
MR25H128ACDFR

Mfr.:

Description:
MRAM 128Kb 3.3V 16Kx8 SPI

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead Time:
27 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 4000   Multiples: 4000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 4000)
4,09 € 16.360,00 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Tray
Availability:
In Stock
Price:
4,82 €
Min:
1

Product Attribute Attribute Value Select Attribute
Everspin Technologies
Product Category: MRAM
RoHS:  
DFN-8
SPI
128 kbit
16 k x 8
8 bit
2.7 V
3.6 V
6 mA, 23 mA
- 40 C
+ 85 C
MR25H128A
Reel
Brand: Everspin Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Pd - Power Dissipation: 600 mW
Product Type: MRAM
Factory Pack Quantity: 4000
Subcategory: Memory & Data Storage
Tradename: Serial I/O (SPI)
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8542320000
CAHTS:
8542320090
USHTS:
8542320071
MXHTS:
8542320201
ECCN:
EAR99

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.