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MASTERGAN1

Name: STMicroelectronics MASTERGAN1
Brand: STMicroelectronics
SKU: 511-MASTERGAN1
Price: 6.73 EUR
Availability: InStock

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Mouser No:

511-MASTERGAN1

Mfr. No:

MASTERGAN1

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

Complete Your Design

Datasheet:

MASTERGAN1 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics MASTERGAN1

In Stock: 370

Stock:: 370 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,73 €	6,73 €
	5,19 €	51,90 €
	4,80 €	120,00 €
	4,38 €	438,00 €
	4,05 €	1.012,50 €
	3,93 €	3.930,00 €
	3,74 €	9.350,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	9.5 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Development Kit:	EVALMASTERGAN1
Moisture Sensitive:	Yes
Operating Supply Current:	680 uA
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	330 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Unit Weight:	120 mg

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Datasheet

MASTERGAN1 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.