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LF2113BTR

Name: IXYS LF2113BTR
Brand: IXYS Integrated Circuits
SKU: 747-LF2113BTR
Price: 2.22 EUR
Availability: InStock

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Mouser No:

747-LF2113BTR

Mfr. No:

LF2113BTR

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers HI LO Side DRVR 600V 2A SOIC-16

Datasheet:

LF2113BTR Datasheet (PDF)

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More Information

Learn more about IXYS Integrated Circuits LF2113BTR

In Stock: 2.853

Stock:: 2.853 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,22 €	2,22 €
	1,66 €	16,60 €
	1,51 €	37,75 €
	1,36 €	136,00 €
	1,28 €	320,00 €
	1,25 €	625,00 €
Full Reel (Order in multiples of 1500)
	1,25 €	1.875,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	15 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	IXYS Integrated Circuits
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	94 ns
Maximum Turn-On Delay Time:	105 ns
Moisture Sensitive:	Yes
Operating Supply Current:	56 uA
Pd - Power Dissipation:	1.25 W
Product Type:	Gate Drivers
Propagation Delay - Max:	20 ns
Factory Pack Quantity:	1500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LF2113BTR Datasheet (PDF)

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TARIC:: 8542399000
CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.

High-Side & Low-Side Gate Driver ICs

IXYS High-Side and Low-Side Gate Driver ICs offer 600mA/290mA to 4.5A/4.5A sink/source output current capabilities. The devices feature a wide operating voltage range of 10V to 20V. Protections include undervoltage lockout (UVLO) and shoot-through. IXYS High-Side and Low-Side Gate Driver ICs operate in a -40°C to +125°C temperature range and are available in SOIC-8, -14, -16 industry-standard packages and pin-outs.