It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC073N12LM6ATMA1

Name: Infineon ISC073N12LM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC073N12LM6ATMA
Price: 2.78 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC073N12LM6ATMA

Mfr. No:

ISC073N12LM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

ISC073N12LM6ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC073N12LM6ATMA1

In Stock: 4.584

Stock:: 4.584

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 4.800

Expected 3/6/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,78 €	2,78 €
	1,81 €	18,10 €
	1,26 €	126,00 €
	1,08 €	540,00 €
	1,03 €	1.030,00 €
	0,946 €	2.365,00 €
Full Reel (Order in multiples of 5000)
	0,909 €	4.545,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	86 A
Rds On - Drain-Source Resistance:	7.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	14.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	45 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	ISC073N12LM6 SP005586060

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC073N12LM6ATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.