IS67WVE4M16EBLL-70BLA1

Name: ISSI IS67WVE4M16EBLL-70BLA1
Brand: ISSI
SKU: 870-7WVE416EBLL70BL1
Price: 7.59 EUR
Availability: InStock

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Mouser No:

870-7WVE416EBLL70BL1

Mfr. No:

IS67WVE4M16EBLL-70BLA1

Mfr.:

ISSI

Description:

SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp

Datasheet:

IS67WVE4M16EBLL-70BLA1 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	64 Mbit
Organisation:	4 M x 16
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.7 V
Supply Current - Max:	30 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	TFBGA-48
Packaging:	Tray
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS67WVE4M16EBLL
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Type:	PSRAM
Unit Weight:	2,338 g

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Datasheet

IS67WVE4M16EBLL-70BLA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8542324500
CNHTS:: 8542329010
CAHTS:: 8542320030
USHTS:: 8542320041
MXHTS:: 8542320299
ECCN:: 3A991.b.2.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

Serial RAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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QuadRAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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Octal Memory

Portfolio of high-speed, low pin count memory products that utilize the JEDEC xSPI interface.

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IS62WVS Serial SRAMs

Fabricated using high-performance CMOS technology to offer 20MHz clock rate and 4µA standby current.

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Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Learn More

In Stock: 471

Stock:: 471 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,59 €	7,59 €
	7,06 €	70,60 €
	6,85 €	171,25 €
	6,68 €	334,00 €
	6,53 €	653,00 €

IS67WVE4M16EBLL-70BLA1

Mfr.: ISSI

Description: SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp

Specifications

Documents (1)

Datasheet

Environmental Documents

Product & Trade Compliance

More Information

Pseudo SRAM/CellularRAM

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Mfr.:

ISSI

Description:

SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp

FEATURED PRODUCTS

ISSI