IS66WVR8M8FBLL-104NLI

Name: ISSI IS66WVR8M8FBLL-104NLI
Brand: ISSI
SKU: 870-WVR8M8FBLL104NLI
Price: 4.43 EUR
Availability: OutOfStock

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Mouser No:

870-WVR8M8FBLL104NLI

Mfr. No:

IS66WVR8M8FBLL-104NLI

Mfr.:

ISSI

Description:

DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS

Datasheet:

IS66WVR8M8FBLL-104NLI Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	PSRAM (Pseudo SRAM)
Memory Size:	64 Mbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	104 MHz
Package/Case:	SOIC-8
Organisation:	8 M x 8
Access Time:	7 ns
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	100
Subcategory:	Memory & Data Storage
Supply Current - Max:	15 mA

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Datasheet

IS66WVR8M8FBLL-104NLI Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320299
ECCN:: 3A991.b.2.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities, ideal for mobile applications.

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High-speed DRAM devices internally organized with an eight-bank setup.

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DDR3 SDRAM

Deliver high-speed data transfer rates up to 2133Mbps.

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Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

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Mobile LPDDR2 SDRAM

High-speed operation, using a double data rate architecture, a prefetch architecture.

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Availability

Stock:: 0

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On Order:: 2.011

Expected 4/12/2027

1.100

Expected 4/16/2027
Factory Lead Time:: 28

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,43 €	4,43 €
	4,13 €	41,30 €
	4,01 €	80,20 €
	3,91 €	195,50 €
	3,81 €	381,00 €

IS66WVR8M8FBLL-104NLI

Mfr.: ISSI

Description: DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS

Specifications

Documents (1)

Datasheet

Environmental Documents

Product & Trade Compliance

More Information

Pseudo SRAM/CellularRAM

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Mfr.:

ISSI

Description:

DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS

FEATURED PRODUCTS

ISSI