IS66WVQ16M4FBLL-200BLI

ISSI
870-VQ16M4DBLL200BLI
IS66WVQ16M4FBLL-200BLI

Mfr.:

Description:
DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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More Information
Learn more about ISSI IS66WVQ16M4FBLL-200BLI

In Stock: 419

Stock:
419 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 7
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,84 € 3,84 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
200 MHz
TFBGA-24
2.7 V
3.6 V
Brand: ISSI
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
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Attributes selected: 0

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CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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