IS66WVE2M16EALL-70BLI

ISSI
870-E2M16EALL70BLI
IS66WVE2M16EALL-70BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS

Datasheet:
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Learn more about ISSI IS66WVE2M16EALL-70BLI

In Stock: 310

Stock:
310 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 200
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,56 € 5,56 €
5,18 € 51,80 €
5,02 € 125,50 €
4,90 € 245,00 €
4,79 € 479,00 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVE2M16EALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

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TARIC:
8542324500
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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