IS66WV51216EBLL-70TLI

Name: ISSI IS66WV51216EBLL-70TLI
Brand: ISSI
SKU: 870-6651216EBLL70TLI
Price: 5.47 EUR
Availability: InStock

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Mouser No:

870-6651216EBLL70TLI

Mfr. No:

IS66WV51216EBLL-70TLI

Mfr.:

ISSI

Description:

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS

Datasheet:

IS66WV51216EBLL-70TLI Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	8 Mbit
Organisation:	512 k x 16
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.5 V
Supply Current - Max:	28 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	TSOP-44
Brand:	ISSI
Memory Type:	SDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS66WV51216EBLL
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Type:	Asynchronous
Unit Weight:	470 mg

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Datasheet

IS66WV51216EBLL-70TLI Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542329010
CAHTS:: 8542320030
USHTS:: 8542320041
JPHTS:: 854232021
KRHTS:: 8542321010
MXHTS:: 8542320299
ECCN:: 3A991.b.2.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

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Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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QuadRAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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Octal Memory

Portfolio of high-speed, low pin count memory products that utilize the JEDEC xSPI interface.

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IS62WVS Serial SRAMs

Fabricated using high-performance CMOS technology to offer 20MHz clock rate and 4µA standby current.

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Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Learn More

In Stock: 755

Stock:: 755 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,47 €	5,47 €
	5,09 €	50,90 €
	4,95 €	123,75 €
	4,82 €	241,00 €
	4,66 €	466,00 €

Alternative Packaging

Mfr. Part No.:

IS66WV51216EBLL-70TLI-TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

6,79 €

Min:

IS66WV51216EBLL-70TLI

Mfr.: ISSI

Description: SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS

Specifications

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Datasheet

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Product & Trade Compliance

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Pseudo SRAM/CellularRAM

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Mfr.:

ISSI

Description:

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS

FEATURED PRODUCTS

ISSI