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IRL540NSTRLPBF

Name: Infineon IRL540NSTRLPBF
Brand: Infineon Technologies
SKU: 942-IRL540NSTRLPBF
Price: 1.86 EUR
Availability: InStock

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Mouser No:

942-IRL540NSTRLPBF

Mfr. No:

IRL540NSTRLPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 100V 36A 44mOhm 49.3nC LogLvl

Datasheet:

IRL540NSTRLPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRL540NSTRLPBF

In Stock: 1.103

Stock:: 1.103 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,86 €	1,86 €
	1,32 €	13,20 €
	0,955 €	95,50 €
	0,937 €	468,50 €
Full Reel (Order in multiples of 800)
	0,685 €	548,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-262-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	63 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	49.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.8 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	4 g

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Datasheet

IRL540NSTRLPBF Datasheet (PDF)

Application Notes

Models

Saber Model - IRL540NS (CAD)

Product Catalogs

SPICE Models

Spice Model - IRL540NS

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.